EМ-5026М1 Mask Aligner

EM-5026M1 system is designed to align the photomask pattern with the wafer (substrate) pattern and to transfer the pattern from the photomask onto the wafer through contact (proximity) exposure of the wafer (substrate) photoresist layer.

EM-5026M1 features the following automatic systems:
- wafer wedge and thickness compensation without contact with the photomask;
- alignment proximity control;
- wafer photoresist exposure;
- energy saving mode.

Single field microscope with smooth magnification adjustment. 

Loading-unloading of wafers and substrates onto the chuck is performed by the operator manually.


Working wavelengths*, nm225-260; 280-335; 350-450
Photolithography resolution, µm0.4 ... 0.6
Illumination uniformity across 76-mm diameter working field,%±2
Alignment accuracy random component, μm±0.1
Wafer diameter*, mm76 (16, 20, 25, 30, 40, 50, 60); 60x48; 48x30
Mask size*, mm76x76; 102х102
Alignment manipulator drive sensitivity: 
- along X, Y, μm0.01
- angular, seconds0.1
Single field microscope with smooth magnification adjustment. 
Magnification with 10x eyepieces 120x, 320x, 485x
Power consumption, not more than, W800
*Subject to customer requirements