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EM-5026M1 system is designed to align the
photomask pattern with the wafer (substrate) pattern and to transfer the
pattern from the photomask onto the wafer through contact (proximity)
exposure of the wafer (substrate) photoresist layer.
EM-5026M1 features the following automatic systems:
- wafer wedge and thickness compensation without contact with the photomask;
- alignment proximity control;
- wafer photoresist exposure;
- energy saving mode.
Single field microscope with smooth magnification adjustment.
Loading-unloading of wafers and substrates onto the chuck is performed by the operator manually.
| Working wavelengths*, nm | 225-260; 280-335; 350-450 | | Photolithography resolution, µm | 0.4 ... 0.6 | | Illumination uniformity across 76-mm diameter working field,% | ±2 | | Alignment accuracy random component, μm | ±0.1 | | Wafer diameter*, mm | 76 (16, 20, 25, 30, 40, 50, 60); 60x48; 48x30 | | Mask size*, mm | 76x76; 102х102 | | Alignment manipulator drive sensitivity: | | | - along X, Y, μm | 0.01 | | - angular, seconds | 0.1 | | Single field microscope with smooth magnification adjustment. | | | Magnification with 10x eyepieces | 120x, 320x, 485x | | Power consumption, not more than, W | 800 | | *Subject to customer requirements |
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PLANAR (KBTEM)
