PLANAR (KBTEM)
 
EM-5171 LASER-BASED MASK DEFECT REPAIR SYSTEM

EM-5171 mask repair system is intended for 65 nm node mask repair.

The repair system operation is based on two mask coating defect repair methods depending on defect types: elimination of opaque defects by mask coating evaporation using focused laser irradiation in pulse mode; transparent defect are repaired by laser enhanced chemical vapor deposition (CVD). Defect area navigation is automatic and is based on the data from mask pattern inspection systems.

Main features:

  • transparent defect repair;
  • opaque defect repair;
  • TV monitoring over orientation, alignment and aiming;
  • possible semiautomatic mask loading/unloading.

 

SPECIFICATIONS

Minimal repairable defect size, um: 
- transparent defects 0.8
- opaque defects0.15
Maximal workfield size, mm
160х160
Feature rotation,°
± 45
Presetting increment of repairable opaque coating area, not more than, um
0.05
Power consumption, not more than, kW
4

 

PERFORMANCE SPECIFICATION

Objective lens magnification120x80x40x
Objective lens working distance7.2 mm7.1 mm7.5 mm
Maximum pellicle height6.3 mm6.3 mm6.3 mm
XY stage minimum step size20 nm20 nm20 nm
XY stage defect navigation accuracy±2 um±2 um±2 um
Edge placement accuracy±50 nm±70 nm±100 nm
Opaque defects:YesYesYes
Minimum edge defect size100 nm200 nm500 nm
Minimum isolated defect size150 nm250 nm500 nm
Minimum trench width300 nm500 nm1000 nm
Transparent defect:


Transparent defect repairN/AYesN/A
Minimum edge defect sizeN/A400 nm*N/A
Minimum isolated defect sizeN/A400 nm*N/A
Minimum trench widthN/A800 nm*N/A

 

* Free space around the defect should be ≤ 0.5 um. Repair of transparent defects is performed by deposition with subsequent evaporation.