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EM-5096 system is designed to align the photomask
pattern and the wafer pattern and to transfer the pattern from the
photomask onto the wafer through the contact (proximity) exposure of the
wafer photoresist layer.
EM-5096 features the following automatic systems:
- wafer wedge and thickness compensation without contact with the photomask;
- operator controlled alignment proximity;
- wafer photoresist exposure;
- energy saving mode;
- alignment mark alignment error definition on photomasks and wafers.
Double field microscope with smooth magnification adjustment.
Loading-unloading of wafers and substrates onto the chuck is performed by the operator manually.
| Working wavelengths*, nm | 225-260; 280-335; 350-450 | | Photolithography resolution, µm | 0.4 ... 0.6 | | Illumination uniformity across 76-mm diameter working field, % | ±2 | | Alignment accuracy random component, μm | ±0.1 | | Wafer diameter*, mm | 76 (16, 20, 25, 30, 40, 50, 60) 60x48; 48x30 | | Mask size*, mm | 76x76; 102х102 | | Alignment manipulator drive sensitivity: | | | - along X, Y, μm | 0.01 | | - angular, seconds | 0.1 | | Double field microscope with smooth magnification adjustment: | | | - OM 0.4/8 objectives and 10x eyepieces | 150х ... 480х | | - OM 0.2/14 objectives and 10x eyepieces | 90х ... 250х | | Power consumption, not more than, W | 800 | | *Subject to customer requirements |
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PLANAR (KBTEM)
