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EМ-6309 Mask pattern coordinates measurement system |
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EM-6309 is intended for high precision coordinates
measurement of pattern components with further calculation of mask
compatibility. The system may also replace traditional optical
comparators in microelectronics production with the design rule down to
180 nm.
The system can be used to measure coordinates of components on:
- glass metallized photomasks made of low and ultra low thermal expansion coefficient material;
- 150 mm and 200 mm silicon wafers in compliance with SEMI M1-0600 standard.
SPECIFICATIONS
| Work filed size, no less than, mm | 200x200 | | Mean square deviation limit σ (Δ) of accuracy random component for measurement of mask pattern component coordinates on 200x200 mm area with confidence probability P = 0,95, not more than, nm | 5 | | Basic accuracy limit Δ of mask pattern feature coordinate measurement resulting from the coordinate system distortion on 200x200 mm area with confidence probability P = 0,95, not more than, nm | 20 | | Basic accuracy limit Δ of 200 mm space measurement along X and Y with confidence probability P = 0,95, not more than, nm | 20 |
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PLANAR (KBTEM)
