«KBTEM-OMO»
JOINT STOCK COMPANY
 
EМ-6209 Mask pattern coordinates measurement system

 

EМ-6209 Mask pattern coordinates measurement system

EM-6209 is intended for high precision coordinates measurement of pattern components with further calculation of mask compatibility. The system may also replace traditional optical comparators in microelectronics production with the design rule down to 180 nm.

The system can be used to measure coordinates of components on:

  • glass metallized photomasks made of low and ultra low thermal expansion coefficient material;
  • 150 mm and 200 mm silicon wafers in compliance with SEMI M1-0600 standard.

 

Specifications 

Work filed size, no less than, mm 200x200
Mean square deviation limit σ (Δ) of accuracy random component for measurement of mask pattern component coordinates on 200x200 mm area with confidence probability P = 0,95, not more than, nm 5
Basic accuracy limit Δ of mask pattern feature coordinate measurement resulting from the coordinate system distortion on 200x200 mm area with confidence probability P = 0,95, not more than, nm 2
Basic accuracy limit Δ of 200 mm space measurement along X and Y with confidence probability P = 0,95, not more than, nm 2