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EM-5079-1 UV pattern generator |
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Pattern generators provide possibility for pattern writing on semiconductor substrates with simultaneous previous layers alignment (maskless optical lithography). The patterning is based on a raster scanning principle.
The EМ-5079-1 exposure system uses a continuous 355 nm solid state laser system. Laser output power: 250 mW.
MTBF is 20000 hours (~10 years).
| Minimum feature size, nm | 600 | | Exposure time of 100x100mm area, min | 70 | | Exposure field size, mm | 215x215 | | Overlay accuracy, nm | 70 | | Edge roughness, nm | 40 | | Address grid increment, nm | 1.25 | | Power consumption, not more than, kW | 5 |
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PLANAR (KBTEM)