EM-5079-1 UV pattern generator

Pattern generators provide possibility for pattern writing on semiconductor substrates with simultaneous previous layers alignment (maskless optical lithography). The patterning is based on a raster scanning principle.

The EМ-5079-1 exposure system uses a continuous 355 nm solid state laser system. Laser output power: 250 mW.
 MTBF is 20000 hours (~10 years).


Minimum feature size, nm600
Exposure time of 100x100mm area, min70
Exposure field size, mm215x215
Overlay accuracy, nm70
Edge roughness, nm40
Address grid increment, nm1.25
Power consumption, not more than, kW5