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EM-5026AM system is designed to align the
photomask pattern with the wafer (substrate) pattern and to transfer the
pattern from the photomask onto the wafer (substrate) through contact
(proximity) exposure of the wafer photoresist layer.
EM-5026AM features the following automatic systems:
- wafer loading from a cassette;
- centering and orientation with reference to primary flat;
- preliminary fine orientation;
- wafer loading on a chuck;
- wafer wedge and thickness compensation without contact with the photomask;
- operator controlled alignment proximity;
- alignment mark alignment error definition on photomasks and wafers;
- exposure of wafer photoresist layer;
- unloading to another cassette;
- energy saving mode.
| Working wavelengths*, nm | 225-260; 280-335; 350-450 | | Photolithography resolution, µm | 0.4 ... 0.7 | | Illumination uniformity across 110 mm diameter working field, % | ±2.5 | | Alignment accuracy random component, μm | ±0.1 | | Wafer diameter*, mm | 50; 60; 76; 100; 60x48 | | Mask size*, mm | 102x102;127x127 | | Alignment manipulator drive sensitivity: | | | - along X, Y, μm | 0.01 | | - angular, seconds | 0.1 | | Microscope with two split fields of view and smooth magnification adjustment: | | | - OM 0.4/8 objectives and 10x eyepieces | 150х ... 480х | | - OM 0.2/14 objectives and 10x eyepieces | 90х ... 250х | | Power consumption, not more than, W | 800 | | *Subject to customer requirements |
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PLANAR (KBTEM)