|
EM-5209 Multi-purpose laser system for micro patterning |
|
The system is intended for fabrication of metalized reticles used in
production of semiconductor devices and ICs of various applications,
photoelectric convertors, LCDs, special measurement and test masks both
for R&D and full scale manufacturing.
SPECIFICATIONS
| Exposure field size, mm | 275х275 | | Positioning accuracy, not more than, um | ±0,15 | | Photosetting element size, um | 0,5?275 | | Photosetting size accuracy, not more than, um | ±0,15 | | Mismatch of geometric center of a photosetting element to rotation axis, not more than, um |
0,5 | | Element edge roughness, not more than, um | 0,15 | | Photosetting element rotation angle accuracy within 0-90° range, not more than | 0,015° | | Exposure throughput for pattern feature location interval up to 50 um, not less than, exposure/hour |
1,7 mln | | Alignment accuracy, um | 0,18 | | Element position presetting increment, um | 0,01 | | Element size presetting increment, um | 0,02 | | Rotation presetting increment | 0,025? | | Objective lens reduction ratio | 1:80 | | Exposure pulse laser wavelength, nm | 337 |
|
|
PLANAR (KBTEM)