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EM-5126 Mask Aligner

 

EM-5126 Mask Aligner EM-5126 Mask Aligner

 

Specifications

Wafer diameter, mm 150
Wafer thickness, mm 0,4 ... 0,8
Mask size, mm 177.8х177.8
Mask thickness, mm 3.15; 3.9; 6.45
Photolithography resolution for vacuum contact, um, not more than 0.6 ... 0.8
Automatic alignment accuracy random component, um < 0.1
Pre-orientation accuracy and wafer-to-workstage transfer accuracy, along X and Y, um, and Θ angle, degree, not more than: X, Y = ±15;
Θ = ± 0.01
Primary exposure mode throughput (without alignment time; for 1 s exposure time), wafers/hour
140
Automatic alignment time (±0.5 to ±0.05 um preset accuracy), s 10 ... 60
Wafer manipulator drive sensitivity, um 0.05
Mask manipulator travel along Х and Y, mm and along Θ angle, degree Х, Y = ± 2
Θ = ± 3
Gap between mask and wafer for alignment and exposure, um 0 ... 40
Exposure wavelength range*, nm 225-260; 280-330;
350-450
Ø150 mm workfield illumination non-uniformity, %, not more than ±2.5
Microscope-to-23” display color image magnification, x Automatic focusing. Automatic illumination adjustment. 250; 500; 1000
Adjustable distance between microscope objective lens axes, mm 80 ... 130
Microscope manipulator travel along Х and Y, mm Х, Y = ± 25
Mercury-xenon lamp power (DRKs-500), W 500
Power consumption, W, not more than 855
Weight, kg 450,0
Overall dimensions, L х W х H, mm 1290 х 1225 х 1550


*To be specified before PO