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EM-5171 LASER-BASED MASK DEFECT REPAIR SYSTEM |
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EM-5171 mask repair system is intended for 65 nm node mask repair.
The repair system operation is based on two mask
coating defect repair methods depending on defect types: elimination of
opaque defects by mask coating evaporation using focused laser
irradiation in pulse mode; transparent defect are repaired by laser
enhanced chemical vapor deposition (CVD). Defect area navigation is
automatic and is based on the data from mask pattern inspection systems.
Main features:
- transparent defect repair;
- opaque defect repair;
- TV monitoring over orientation, alignment and aiming;
- possible semiautomatic mask loading/unloading.
SPECIFICATIONS
| Minimal repairable defect size, um: | | | - transparent defects | 0.8 | | - opaque defects | 0.15 | Maximal workfield size, mm
| 160х160
| Feature rotation,°
| ± 45
| Presetting increment of repairable opaque coating area, not more than, um
| 0.05
| Power consumption, not more than, kW
| 4
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PERFORMANCE SPECIFICATION
| Objective lens magnification | 120x | 80x | 40x | | Objective lens working distance | 7.2 mm | 7.1 mm | 7.5 mm | | Maximum pellicle height | 6.3 mm | 6.3 mm | 6.3 mm | | XY stage minimum step size | 20 nm | 20 nm | 20 nm | | XY stage defect navigation accuracy | ±2 um | ±2 um | ±2 um | | Edge placement accuracy | ±50 nm | ±70 nm | ±100 nm | | Opaque defects: | Yes | Yes | Yes | | Minimum edge defect size | 100 nm | 200 nm | 500 nm | | Minimum isolated defect size | 150 nm | 250 nm | 500 nm | | Minimum trench width | 300 nm | 500 nm | 1000 nm | | Transparent defect: |
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| | Transparent defect repair | N/A | Yes | N/A | | Minimum edge defect size | N/A | 400 nm* | N/A | | Minimum isolated defect size | N/A | 400 nm* | N/A | | Minimum trench width | N/A | 800 nm* | N/A |
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* Free space around the defect should be ≤ 0.5 um. Repair of transparent defects is performed by deposition with subsequent evaporation.
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PLANAR (KBTEM)
