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EM-5141 LASER-BASED MASK DEFECT REPAIR SYSTEM |
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EM-5141 mask repair system is intended for 65 nm node mask repair.
The repair system operation is based on two mask coating defect repair methods depending on defect types: elimination of opaque defects by mask coating evaporation using focused RYF-1/5FH laser irradiation in pulse mode; transparent defect are repaired by laser enhanced chemical vapor deposition (CVD). Defect area navigation is automatic and is based on the data from mask pattern inspection systems.
Main features:
- transparent defect repair;
- opaque defect repair;
- TV monitoring over orientation, alignment and aiming;
- possible semiautomatic mask loading/unloading.
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Specifications
| Minimal repairable defect size, um: |
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| - transparent defects |
0.45 |
| - opaque defects |
0.15 |
Maximal workfield size, mm
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160х160
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Feature rotation,°
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0 ... 90
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Presetting increment of repairable opaque coating area, not more than, um
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0.05
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Power consumption, not more than, kW
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4
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Performance specification
| Objective lens magnification |
100x |
75x |
30x |
| Objective lens working distance |
2.2 mm |
7.1 mm |
7.5 mm |
| Maximum pellicle height |
N/A |
6.3 mm |
6.3 mm |
| XY stage minimum step size |
10 nm |
10 nm |
10 nm |
| XY stage defect navigation accuracy |
±1 um |
±1 um |
±1 um |
| Edge placement accuracy |
±50 nm |
±70 nm |
±100 nm |
| Opaque defects: |
Yes |
Yes |
Yes |
| Minimum edge defect size |
100 nm |
200 nm |
500 nm |
| Minimum isolated defect size |
150 nm |
250 nm |
500 nm |
| Minimum trench width |
300 nm |
500 nm |
1000 nm |
| Transparent defect: |
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| Transparent defect repair |
N/A |
Yes |
N/A |
| Minimum edge defect size |
N/A |
300 nm* |
N/A |
| Minimum isolated defect size |
N/A |
300 nm* |
N/A |
| Minimum trench width |
N/A |
600 nm* |
N/A |
* Free space around the defect should be ≤ 0.5 um. Repair of transparent defects is performed by deposition with subsequent evaporation.
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