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EM-5141 LASER-BASED MASK DEFECT REPAIR SYSTEM

 

EM-5141 LASER-BASED MASK DEFECT REPAIR SYSTEM

EM-5141 mask repair system is intended for 65 nm node mask repair.

The repair system operation is based on two mask coating defect repair methods depending on defect types: elimination of opaque defects by mask coating evaporation using focused RYF-1/5FH laser irradiation in pulse mode; transparent defect are repaired by laser enhanced chemical vapor deposition (CVD). Defect area navigation is automatic and is based on the data from mask pattern inspection systems.

Main features:

  • transparent defect repair;
  • opaque defect repair;
  • TV monitoring over orientation, alignment and aiming;
  • possible semiautomatic mask loading/unloading.

 

Specifications

Minimal repairable defect size, um:  
- transparent defects 0.45
- opaque defects 0.15
Maximal workfield size, mm
160х160
Feature rotation,°
0 ... 90
Presetting increment of repairable opaque coating area, not more than, um
0.05
Power consumption, not more than, kW
4

 

Performance specification

Objective lens magnification 100x 75x 30x
Objective lens working distance 2.2 mm 7.1 mm 7.5 mm
Maximum pellicle height N/A 6.3 mm 6.3 mm
XY stage minimum step size 10 nm 10 nm 10 nm
XY stage defect navigation accuracy ±1 um ±1 um ±1 um
Edge placement accuracy ±50 nm ±70 nm ±100 nm
Opaque defects: Yes Yes Yes
Minimum edge defect size 100 nm 200 nm 500 nm
Minimum isolated defect size 150 nm 250 nm 500 nm
Minimum trench width 300 nm 500 nm 1000 nm
Transparent defect:
Transparent defect repair N/A Yes N/A
Minimum edge defect size N/A 300 nm* N/A
Minimum isolated defect size N/A 300 nm* N/A
Minimum trench width N/A 600 nm* N/A

 

* Free space around the defect should be ≤ 0.5 um. Repair of transparent defects is performed by deposition with subsequent evaporation.