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EM-5209 MULTI-PURPOSE LASER SYSTEM FOR MICRO PATTERNING

 

EM-5209 MULTI-PURPOSE LASER SYSTEM FOR MICRO PATTERNING 

The system is intended for fabrication of metalized reticles used in production of semiconductor devices and ICs of various applications, photoelectric convertors, LCDs, special measurement and test masks both for R&D and full scale manufacturing.

 

Specifications

Exposure field size, mm 300х300
Positioning accuracy, not more than, um ±0,15
Photosetting element size, um 0,5÷275
Photosetting size accuracy, not more than, um ±0,15
Mismatch of geometric center of a photosetting element to rotation axis, not more than, um
0,5
Element edge roughness, not more than, um 0,15
Photosetting element rotation angle accuracy within 0-90° range, not more than 0,015°
Exposure throughput for pattern feature location interval up to 50 um, not less than, exposure/hour
1,7 mln
Alignment accuracy, um 0,18
Element position presetting increment, um 0,01
Element size presetting increment, um 0,02
Rotation presetting increment 0,025º
Objective lens reduction ratio 1:80
Exposure pulse laser wavelength, nm 337