Wafer diameter, mm | 150 |
Wafer thickness, mm | 0.4 ... 0.8 |
Mask size, mm | 177.8 х 177.8 |
Mask thickness, mm | 3 ... 3.9 |
Photolithography resolution during vacuum contact,
µm, not more than | 0.6 ... 0.8 |
Alignment accuracy random component, µm | ±0.1 |
Pre-orientation accuracy and wafer-to-workstage transfer accuracy, along X and Y,
µm, not more than: | ±15 |
Pre-orientation accuracy and wafer-to-workstage transfer accuracy along Θ, degree, not more than: |
± 0.01
|
Throughput in primary exposure mode (excluding alignment time for 1 s exposure time), wafer/hour |
140
|
Wafer manipulator travel range along Х axis and Y axis, mm, not less than
|
± 3 |
Wafer manipulator travel range along Θ, angle, degree, not less than
| ± 10 |
Alignment manipulator drive sensitivity along X and Y,
µm,
|
< 0.01 |
Alignment manipulator drive sensitivity along Θ angle, second |
< 0.1 |
Mask manipulator travel range
along Х axis and Y axis, mm |
± 2 |
Mask manipulator travel range along Θ angle, degree | ± 3 |
Gap between mask and wafer for alignment
and exposure, µm |
0 ... 40
|
Exposure wavelength ranges*, nm
|
225-260; 280-330;
350-450 |
Ø 150 mm exposure field illumination uniformity, %, not more than |
±2.5
|
Two-field microscope magnification with split field and smooth magnification adjustment: | |
- 10х eyepieces and ОМ-0.2/14.5 (ОМ1-0.4/8) objective lenses, x |
85 … 270 (150 … 470) |
- together with color video camera for 23” display size, x
|
225 … 560 (400 … 1000) |
Adjustable distance between microscope objective axes, mm
|
32 … 129
|
Microscope manipulator travel along Х and Y, mm
|
± 25 |
Mercury-xenon lamp power (DRKs-500)**, W |
500
|
Power consumption, W, not more than |
800 |
Weight, kg |
420
|
Overall dimensions, L х W х H, mm |
1290 х 1225 х 1520 |
* Subject to customer requirementss
** Possible use of LED optical exposure units for low power consumption and long service life. |